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參數(shù)資料
| 型號： | skb10n60 |
| 廠商： | SIEMENS AG |
| 英文描述： | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| 中文描述： | 快速的S - IGBT的不擴(kuò)散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管（不擴(kuò)散技術(shù)中的快速第S - IGBT技術(shù)） |
| 文件頁數(shù)： | 6/14頁 |
| 文件大?。?/td> | 296K |
| 代理商： | SKB10N60 |
SKP10N60
SKB10N60, SKW10N60
6
Mar-00
t
,
S
0A
5A
10A
15A
20A
25A
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t
,
S
0
20
40
60
80
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
I
C
,
COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 25
)
R
G
,
GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 10A)
t
,
S
0°C
50°C
100°C
150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
V
G
,
G
-
E
-50°C
0°C
50°C
100°C
150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
typ.
min.
max.
T
j
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 10A,
R
G
= 25
)
T
j
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(
I
C
= 0.3mA)
相關(guān)PDF資料 |
PDF描述 |
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| SKP10N60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| SKW10N60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| skb15n60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| SKP15N60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| SKW15N60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SKB10N60A | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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| SKB-1-1 | 制造商:Sunhayato 功能描述: |
| SKB110 | 制造商:SEMIKRON 制造商全稱:Semikron International 功能描述:Miniature Bridge Rectifiers |
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