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參數(shù)資料
| 型號(hào)： | skb10n60 |
| 廠商： | SIEMENS AG |
| 英文描述： | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| 中文描述： | 快速的S - IGBT的不擴(kuò)散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管（不擴(kuò)散技術(shù)中的快速第S - IGBT技術(shù)） |
| 文件頁數(shù)： | 3/14頁 |
| 文件大小： | 296K |
| 代理商： | SKB10N60 |
SKP10N60
SKB10N60, SKW10N60
3
Mar-00
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
29
21
233
49
0.20
0.17
0.370
35
25
280
59
0.230
0.221
0.451
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=10A,
V
GE
=0/15V,
R
G
=25
,
Energy losses include
“tail” and diode
reverse recovery.
mJ
t
rr
t
S
t
F
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
-
-
220
20
200
310
4.5
180
-
-
-
-
-
-
ns
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
nC
A
A/
μ
s
T
j
=25
°
C,
V
R
=200V,
I
F
=10A,
di
F
/dt
=200A/
μ
s
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
29
21
266
63
0.297
0.28
0.577
35
25
319
76
0.342
0.364
0.706
ns
T
j
=150
°
C
V
CC
=400V,
I
C
=10A,
V
GE
=0/15V,
R
G
=25
Energy losses include
“tail” and diode
reverse recovery.
mJ
t
rr
t
S
t
F
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
-
-
350
36
314
690
6.3
200
-
-
-
-
-
-
ns
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
nC
A
A/
μ
s
T
j
=150
°
C
V
R
=200V,
I
F
=10A,
di
F
/dt
=200A/
μ
s
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| SKP10N60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
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| SKW15N60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
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