- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374791 > SIGC16T120CL (INFINEON TECHNOLOGIES AG) IGBT Chip in NPT-technology PDF資料下載
參數(shù)資料
| 型號： | SIGC16T120CL |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴散核武器條約IGBT芯片技術(shù) |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 74K |
| 代理商： | SIGC16T120CL |
SIGC16T120CL
Edited by INFINEON Technologies AI PS DD HV3, L 7131-P, Edition 2, 03.09.2003
MAXIMUM RATINGS
:
Parameter
Symbol
Value
Unit
Collector-emitter voltage,
T
j=25
°
C
V
CE
1200
V
DC collector current, limited by T
jmax
I
C
1 )
A
Pulsed collector current, t
p
limited by T
jmax
I
cpuls
24
A
Gate emitter voltage
V
GE
±
20
V
Operating junction and storage temperature
T
j
, T
stg
-55 ... +150
°C
1 )
depending on thermal properties of assembly
STATIC CHARACTERISTICS
(tested on chip),
T
j=25
°
C, unless otherwise specified:
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V , I
C
=500μA
1200
Collector-emitter saturation voltage
V
CE(sat)
V
GE
=15V, I
C
=8A
1.8
2.2
2.6
Gate-emitter threshold voltage
V
GE(th)
I
C
=350μA , V
GE
=V
CE
4.5
5.5
6.5
V
Zero gate voltage collector current
I
CES
V
CE
=1200V , V
GE
=0V
1.1
μA
Gate-emitter leakage current
DYNAMIC CHARACTERISTICS
(tested at component):
I
GES
V
CE
=0V , V
GE
=20V
120
nA
Value
typ.
556
Parameter
Symbol
Conditions
min.
max.
-
Unit
Input capacitance
C
iss
C
oss
C
rss
-
Output capacitance
Reverse transfer capacitance
SWITCHING CHARACTERISTICS
(tested at component)
,
Inductive Load:
-
-
-
-
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
38
pF
Value
Parameter
Symbol
Conditions
1)
min.
typ.
max.
Unit
Turn-on delay time
t
d(on)
-
45
-
Rise time
t
r
-
40
-
Turn-off delay time
t
d(off)
-
285
-
Fall time
t
f
T
j
=125
°
C
V
CC
=600V,
I
C
=10A
V
GE
=
±
15V,
R
G
=82
-
60
-
ns
1)
values also influenced by parasitic L- and C- in measurement and package.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SIGC16T120CS | IGBT Chip in NPT-technology |
| SIGC16T120C | IGBT Chip in NPT-technology |
| SIGC185T170R2C | IGBT Chip in NPT-technology |
| SIGC18T60NC | IGBT Chip in NPT-technology |
| SIGC18T60SNC | IGBT Chip in NPT-technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SIGC16T120CS | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC16T120CZJ | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 3-Pin Die |
| SIGC185T170R2C | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC186T170R3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip |
| SIGC186T170R3 WAF | 制造商:Infineon Technologies AG 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。