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參數(shù)資料
| 型號： | SIGC185T170R2C |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴(kuò)散核武器條約IGBT芯片技術(shù) |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 79K |
| 代理商： | SIGC185T170R2C |
SIGC185T170R2C
Edited by INFINEON Technologies AI PS DD HV3, L 7371M, Edition 2, 04.09.2003
IGBT Chip in NPT-technology
FEATURES:
1700V NPT technology
280μm chip
short circuit prove
positive temperature coefficient
easy paralleling
Chip Type
This chip is used for:
IGBT-Module BSM100GB170DL
Applications:
drives
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67041-A4697-
A001
SIGC185T170R2C
1700V 100A
13.56 x 13.56 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
13.56
x 13.56
Area total / active
183.87 / 141.6
Emitter pad size
8
x
( 2.38x3.98 )
Gate pad size
0.757 x 1.48
mm
2
Thickness
280
μm
Wafer size
150
mm
Flat position
90
deg
Max.possible chips per wafer
72 pcs
Passivation frontside
Photoimide
Emitter metalization
3200 nm Al Si 1%
Collector metalization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
Electrically conductive glue or solder
Wire bond
Al,
≤
500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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相關(guān)代理商/技術(shù)參數(shù) |
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| SIGC186T170R3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip |
| SIGC186T170R3 WAF | 制造商:Infineon Technologies AG 功能描述: |
| SIGC18T60NC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC18T60SNC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC18T60UN | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:High Speed IGBT Chip in NPT-technology positive temperature coefficient |
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