參數(shù)資料
型號(hào): SIGC18T60NC
廠商: INFINEON TECHNOLOGIES AG
英文描述: IGBT Chip in NPT-technology
中文描述: 在不擴(kuò)散核武器條約IGBT芯片技術(shù)
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 77K
代理商: SIGC18T60NC
SIGC18T60NC
Edited by INFINEON Technologies AI PS DD HV3, L 7242-M, Edition 2, 28.11.2003
IGBT Chip in NPT-technology
FEATURES:
600V NPT technology
100μm chip
positive temperature coefficient
easy paralleling
This chip is used for:
IGBT Modules
Applications:
drives
G
C
E
Chip Type
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67050-A4139-
A001
SIGC18T60NC
600V
20A
4.3 x 4.3 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
4.3 x 4.3
Area total / active
18.49 / 14.3
Emitter pad size
2.48 x 2.98
Gate pad size
0.7 x 1.08
mm
2
Thickness
100
μm
Wafer size
150
mm
Flat position
270
deg
Max.possible chips per wafer
796
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al,
500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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