參數(shù)資料
型號: SIGC16T120C
廠商: INFINEON TECHNOLOGIES AG
英文描述: IGBT Chip in NPT-technology
中文描述: 在不擴(kuò)散核武器條約IGBT芯片技術(shù)
文件頁數(shù): 1/4頁
文件大?。?/td> 74K
代理商: SIGC16T120C
SIGC16T120C
Edited by INFINEON Technologies AI PS DD HV3, L 7131-M, Edition 2, 03.09.2003
IGBT Chip in NPT-technology
FEATURES:
1200V NPT technology
200μm chip
short circuit prove
positive temperature coefficient
easy paralleling
Chip Type
This chip is used for:
BUP 311D /BUP 212
Applications:
drives
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67041-A4673-
A003
SIGC16T120C
1200V
8A
4.04 x 4 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
4.04 x 4
Area total / active
16.16 / 10.4
Emitter pad size
1.88x2.18
Gate pad size
0.71x1.08
mm
2
Thickness
200
μm
Wafer size
150
mm
Flat position
0
deg
Max.possible chips per wafer
898 pcs
Passivation frontside
Photoimide
Emitter metalization
3200 nm Al Si 1%
Collector metalization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al,
500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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