參數(shù)資料
型號(hào): SIGC20T120
廠商: INFINEON TECHNOLOGIES AG
英文描述: IGBT3 Chip
中文描述: IGBT3芯片
文件頁數(shù): 1/4頁
文件大?。?/td> 83K
代理商: SIGC20T120
SIGC20T120
Edited by INFINEON Technologies AI PS DD HV3, L7631A, Edition 2, 04.09.2003
IGBT
3
Chip
FEATURES:
1200V Trench + Field Stop technology
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
Chip Type
This chip is used for:
power module
Applications:
drives
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67050-
A4103-A001
SIGC20T120
1200V
15A
4.41 x 4.47 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
4.41 x 4.47
Emitter pad size
2.995 x 2.901
Gate pad size
1.107 x 0.702
mm
Area total / active
19.7 / 12.8
mm
2
Thickness
140
μm
Wafer size
150
mm
Flat position
0
grd
Max.possible chips per wafer
748 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm AlSiCu
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al, <500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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