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參數(shù)資料
| 型號： | SI7401DN-RC |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | R-C Thermal Model Parameters |
| 中文描述： | 遙控模型參數(shù)熱 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 247K |
| 代理商： | SI7401DN-RC |
Vishay Siliconix
Si7401DN_RC
Document Number: 73834
Revision 03-Mar-06
www.vishay.com
1
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
RT1
RT2
RT3
RT4
Ambient
4.5197
7.4284
11.8825
56.6379
Case
Foot
362.3679 u
504.3467 m
972.1139 m
937.1926 m
N/A
N/A
N/A
N/A
Thermal Capacitance (Joules/°C)
Junction to
CT1
CT2
CT3
CT4
Ambient
6.7430 m
32.7582 m
109.4727 m
1.1804
Case
1.9260 m
787.5516 u
18.2079 m
9.3126 m
Foot
N/A
N/A
N/A
N/A
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI7401DN-T1 | 功能描述:MOSFET 20V 11A 3.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7401DN-T1-E3 | 功能描述:MOSFET 20V 11A 3.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7402DN | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 12-V (D-S) MOSFET |
| SI7402DN-T1-E3 | 功能描述:MOSFET 12V 20A 3.8W 5.7mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7402DN-T1-GE3 | 功能描述:MOSFET 12V 20A 3.8W 5.7mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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