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參數資料
| 型號： | SI7414DN |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) MOSFET |
| 中文描述： | N通道60V（D-S）MOSFET |
| 文件頁數： | 1/4頁 |
| 文件大小： | 48K |
| 代理商： | SI7414DN |
TrenchFET Power MOSFET
New Low Thermal Resistance
PowerPAK 1212-8 Package with Low
1.07-mm Profile
PWM Optimized
Primary Side Switch
Synchronous Rectifier
Motor Drives
Si7414DN
Vishay Siliconix
New Product
Document Number: 71738
S-04764—Rev. A, 08-Oct-01
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.025 @ V
GS
= 10 V
0.036 @ V
GS
= 4.5 V
8.7
60
7.3
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
PowerPAK 1212-8
Bottom View
N-Channel MOSFET
G
D
S
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
60
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
8.7
5.6
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
7.0
4.4
Pulsed Drain Current
I
DM
30
A
Continuous Source Current (Diode Conduction)
a
I
S
3.2
1.3
Single Avalanche Current
I
AS
19
Single Avalanche Energy
L = 0.1 mH
E
AS
18
mJ
T
A
= 25 C
3.8
1.5
Maximum Power Dissipation
a
T
A
= 70 C
P
D
2.0
0.8
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
26
33
Maximum Junction-to-Ambient
a
Steady State
R
thJA
65
81
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.9
2.4
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI7414DN_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) MOSFET |
| SI7414DN-T1 | 功能描述:MOSFET 60V 8A 0.025 OHMS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7414DN-T1-E3 | 功能描述:MOSFET 60V 8A 0.025 OHMS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7414DN-T1-GE3 | 功能描述:MOSFET 60V 8.7A 3.8W 25mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7415DN | 制造商:Vishay Intertechnologies 功能描述:MOSFET, P, POWERPAK, Transistor Polarity:P Channel, Continuous Drain Current Id: |
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