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參數(shù)資料
| 型號： | Si7409DN |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 30-V (D-S) MOSFET |
| 中文描述： | P溝道30V的MOSFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 45K |
| 代理商： | SI7409DN |
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
V
DS
Optimized for Load Switch
APPLICATIONS
Load Switch
Si7409DN
Vishay Siliconix
New Product
Document Number: 72127
S-03372—Rev. A, 03-Mar-03
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
-30
0.019 @ V
GS
= -4.5 V
-11
0.031 @ V
GS
= -2.5 V
-8.5
P-Channel MOSFET
D
G
S
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
PowerPAK 1212-8
Bottom View
Ordering Information:
Si7409DN-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-30
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-11
-7
T
A
= 85 C
-7.9
-5
A
Pulsed Drain Current
I
DM
-30
continuous Source Current (Diode Conduction)
a
I
S
-3.2
-1.3
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.8
1.5
W
T
A
= 85 C
2.0
0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
26
33
Steady State
65
81
C/W
Maximum Junction-to-Case
Steady State
R
thJC
1.9
2.4
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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| SI7415DN-RC | R-C Thermal Model Parameters |
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| Si7423DN | P-Channel 30-V (D-S) MOSFET |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI7409DN-T1-E3 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET P-CH 30V 7A 8-Pin PowerPAK 1212 T/R |
| SI7411DN | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
| SI7411DN-T1 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET P-CH 20V 7.5A 8-Pin PowerPAK 1212 T/R |
| SI7411DN-T1-E3 | 功能描述:MOSFET 20V 11A 3.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7411DN-T1-GE3 | 功能描述:MOSFET 20V 11.4A 3.6W 19mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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