參數(shù)資料
型號: SI4933DY
廠商: Vishay Intertechnology,Inc.
英文描述: Dual P-Channel 12-V (D-S) MOSFET
中文描述: 雙P溝道12 V的(副)MOSFET的
文件頁數(shù): 4/5頁
文件大?。?/td> 44K
代理商: SI4933DY
Si4933DY
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 71980
S-22122
Rev. B, 25-Nov-02
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
30
50
10
20
P
Single Pulse Power
Time (sec)
40
10
- 3
10
- 2
1
10
600
10
- 1
10
- 4
100
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 500 A
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
V
V
G
T
J
- Temperature ( C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85 C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
1
100
600
10
10
- 1
10
- 2
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.01
10
T
= 25 C
Single Pulse
-
I
D
P(t) = 10
dc
0.1
I
DM
Limited
I
Limited
r
DS(on)
Limited
BV
DSS
Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
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