參數(shù)資料
型號(hào)： SI4933DY
廠商： Vishay Intertechnology,Inc.
英文描述： Dual P-Channel 12-V (D-S) MOSFET
中文描述： 雙P溝道12 V的（副）MOSFET的
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 44K
代理商： SI4933DY
Si4933DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71980
S-22122
—
Rev. B, 25-Nov-02
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -500 A
-0.40
-1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8
V
100
nA
V
DS
= -9.6 V, V
GS
= 0 V
-1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -9.6 V, V
GS
= 0 V, T
J
= 55 C
-5
A
On-State Drain Current
a
I
D(on)
V
DS
= -5 V, V
GS
= -4.5 V
-30
A
V
GS
= -4.5 V, I
D
= -9.8 A
0.0115
0.014
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -2.5 V, I
D
= -8.9 A
0.014
0.017
V
GS
= -1.8 V, I
D
= -5.0 A
0.018
0.022
Forward Transconductance
a
g
fs
V
DS
= -10
V, I
D
= -9.8 A
40
S
Diode Forward Voltage
a
V
SD
I
S
= -1.7 A, V
GS
= 0 V
-0.7
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
46
70
Gate-Source Charge
Q
gs
V
DS
= 6 V,
V
GS
= -4.5 V, I
D
= -9.8 A
6.0
nC
Gate-Drain Charge
Q
gd
13
Turn-On Delay Time
t
d(on)
35
55
Rise Time
t
r
V
= 6 V, R
= 6
-1 A, V
GEN
= -4.5 V, R
G
= 6
47
70
Turn-Off Delay Time
t
d(off)
I
D
320
480
ns
Fall Time
t
f
260
390
Source-Drain Reverse Recovery Time
t
rr
I
F
= -1.7 A, di/dt = 100 A/ s
210
315
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
6
12
18
24
30
0.0
0.4
0.8
1.2
1.6
2.0
0
6
12
18
24
30
0
1
2
3
4
5
V
GS
= 5 thru 2 V
T
C
= 125 C
-55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
1 V
1.5 V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4933DY-T1 功能描述:MOSFET 12V 9.8A 1.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4933DY-T1-E3 功能描述:MOSFET DUAL P-CH 12V (D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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SI4936 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode MOSFET
SI4936ADY 功能描述:MOSFET 30V 5.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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