參數(shù)資料
型號(hào)： SGW50N60HS
廠商： INFINEON TECHNOLOGIES AG
英文描述： High Speed IGBT in NPT-technology
中文描述： 在不擴(kuò)散核武器條約高高速I(mǎi)GBT的技術(shù)
文件頁(yè)數(shù)： 3/11頁(yè)
文件大?。?/td> 331K
代理商： SGW50N60HS
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
SGW50N60HS
Power Semiconductors
3
Rev. 2.1 June 06
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
-
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
47
32
310
16
1.08
0.88
1.96
-
-
-
-
-
-
-
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=50A,
V
GE
=0/15V,
R
G
=6.8
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery
2)
.
1)
=55nH,
1)
=40pF
mJ
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
50
28
225
14
1
0.90
1.9
-
-
-
-
-
-
-
ns
T
j
=150
°
C
V
CC
=400V,
I
C
=50A,
V
GE
=0/15V,
R
G
= 1.8
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery
2)
.
1)
=60nH,
1)
=40pF
mJ
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
48
31
350
20
1.5
1.1
2.6
-
-
-
-
-
-
-
ns
T
j
=150
°
C
V
CC
=400V,
I
C
=50A,
V
GE
=0/15V,
R
G
= 6.8
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery
2)
.
1)
=60nH,
1)
=40pF
mJ
1
Leakage inductance
L
σ
and Stray capacity
C
σ
due to test circuit in Figure E.
2
Diode used in this test is IDP45E60
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參數(shù)描述
SGW50N60HS_09 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
SGW50N60HSFKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 100A 416W TO247-3
SGW50N60HSXK 制造商:Infineon Technologies 功能描述:Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247
SGW5N60RUF 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT
SGW5N60RUFD 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT
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