參數(shù)資料
型號: SGW50N60HS
廠商: INFINEON TECHNOLOGIES AG
英文描述: High Speed IGBT in NPT-technology
中文描述: 在不擴(kuò)散核武器條約高高速IGBT的技術(shù)
文件頁數(shù): 1/11頁
文件大?。?/td> 331K
代理商: SGW50N60HS
High Speed IGBT in NPT-technology
30% lower
E
off
compared to previous generation
Short circuit withstand time – 10
μ
s
Designed for operation above 30 kHz
NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate E
off
increase with temperature
- very tight parameter distribution
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1
for target applications
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
SGW50N60HS
Power Semiconductors
1
Rev. 2.1 June 06
E
off25
T
j
Marking
Package
SGW50N60HS
600V
50A
0.88mJ
150
°
C G50N60HS
PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
600V,
T
j
150
°
C
Avalanche energy single pulse
I
C
= 50A,
V
CC
=50V,
R
GE
=25
start
T
J
=25
°
C
Gate-emitter voltage static
V
CE
I
C
600
100
50
V
A
I
Cpuls
-
150
150
E
AS
280
mJ
transient (
t
p
<1μs,
D
<0.05)
V
GE
±
20
±
30
V
μ
s
Short circuit withstand time
2)
V
GE
= 15V,
V
CC
600V,
T
j
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
t
SC
10
P
tot
416
W
T
j
,
T
stg
T
j(tl)
-
-55...+150
Time limited operating junction temperature for
t
< 150h
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
175
260
°
C
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-247-3-21
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