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參數(shù)資料
| 型號(hào)： | SH0R3D42 |
| 廠商： | Toshiba Corporation |
| 英文描述： | HIGH SPEED SWITCHING AND CONTROL APPLICATIONS |
| 中文描述： | 高速開關(guān)和控制應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 131K |
| 代理商： | SH0R3D42 |
SH0R3D42
2001-07-10
1
TOSHIBA HIGH SPEED THYRISTOR SILICON PLANAR TYPE
SH0R3D42
HIGH SPEED SWITCHING AND CONTROL
APPLICATIONS
Repetitive Peak Off
State Voltage : V
DRM
= 200V
Average On
State Current
Plastic Mold Type.
MAXIMUM RATINGS
: I
T (AV)
= 300mA
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Off
State Voltage
(R
GK
= 1k
)
V
DRM
200
V
Non
Repetitive Peak Off
State
Voltage (R
GK
= 1k
)
V
DSM
250
V
Average On
State Current
(Half Sine Waveform Ta = 30°C)
I
T (AV)
300
mA
R.M.S On
State Current
I
T (RMS)
450
mA
Peak One Cycle Surge On
State
Current (Non
Repetitive)
I
2
t Limit Value
I
TSM
7 (50Hz)
A
I
2
t
0.3
A
2
s
Peak Gate Power Dissipation
P
GM
0.1
W
Average Gate Power Dissipation
P
G (AV)
0.01
W
Peak Forward Gate Voltage
V
FGM
3.5
V
Peak Reverse Gate Voltage
V
RGM
7
V
Peak Forward Gate Current
I
GM
125
mA
Junction Temperature
T
j
40~125
°C
Storage Temperature Range
T
stg
40~125
°C
Note:
Should be used with gate resistance as follows.
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 0.2g
TO
92
SC
43
13
5A1A
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