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參數(shù)資料
| 型號： | SGL5N60RUFD |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | CO-PAK IGBT(CO-PAK絕緣柵雙極晶體管(IGBT)) |
| 中文描述： | 8 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 369K |
| 代理商： | SGL5N60RUFD |
Characteristics
C - E Breakdown Voltage
Temperature Coeff. of
Breakdown Voltage
G - E threshold voltage
Collector cutoff Current
G - E leakage Current
Collector to Emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Turn on rise time
Turn off delay time
Turn off fall time
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Short Circuit withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Symbol
BV
CES
V
CES/
T
J
V
GE(th)
I
CES
I
GES
V
CE
(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tsc
Qg
Qge
Qgc
Min
600
-
5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
Typ
-
0.6
6.0
-
-
2.0
2.5
337
60
13
9
18
46
140
80
100
180
-
24
7
8
Max
-
-
8.0
250
100
2.7
-
-
-
-
-
-
75
280
-
-
270
-
36
10
12
Units
V
V/
°
C
V
uA
nA
V
V
pF
pF
pF
nS
nS
nS
nS
uJ
uJ
uJ
uS
nC
nC
nC
ELECTRICAL CHARACTERISTICS (IGBT PART)
(T
c
=25
°
C,Unless Otherwise Specified)
Test Conditions
V
GE
= 0V , I
C
= 250uA
V
GE
= 0V , I
C
= 1mA
I
C
= 5mA , V
CE
= V
GE
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
Ic=5A, V
GE
= 15V
Ic=8A, V
GE
= 15V
V
GE
= 0V , f = 1MHz
V
CE
= 30V
V
CC
= 300V , I
C
= 5A
V
GE
= 15V
R
G
= 40
Inductive Load
Vcc = 300V, V
GE
= 15V
@Tc = 100
°
C
Vcc = 300V
V
GE
= 15V
Ic = 5A
CO-PAK IGBT
SGL5N60RUFD
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SGL5N60RUFDTU | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGL60N90D | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:IGBT CO-PAK (High Speed Switching Low Saturation Voltage High Input Impedance) |
| SGL60N90DG3 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Description |
| SGL60N90DG3M1TU | 功能描述:IGBT 晶體管 900V/60A/wFRD TO-264 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGL60N90DG3M2TU | 功能描述:IGBT 晶體管 900V/60A/wFRD TO-264 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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