參數(shù)資料
型號: SGH80N60
廠商: Fairchild Semiconductor Corporation
英文描述: Ultra-Fast IGBT
中文描述: 超快速IGBT
文件頁數(shù): 4/7頁
文件大?。?/td> 557K
代理商: SGH80N60
SGH80N60UF Rev. A1
S
2002 Fairchild Semiconductor Corporation
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
1
10
30
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Cres
Coes
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
C
Collector - Emitter Voltage, V
CE
[V]
1
10
80
20
100
1000
2000
Toff
Tf
Tf
Common Emitter
V
= 300V, V
GE
=
±
15V
I
C
= 40A
T
C
= 25
T
C
= 125
S
Gate Resistance, R
G
[
]
1
10
70
20
100
500
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 40A
T
C
= 25
T
C
= 125
Ton
Tr
S
Gate Resistance, R
G
[
]
1
10
80
100
1000
5000
Eoff
Eon
Eoff
Common Emitter
V
= 300V, V
GE
=
±
15V
I
C
= 40A
T
C
= 25
T
C
= 125
S
Gate Resistance, R
G
[
]
10
20
30
40
50
60
70
80
10
100
500
Ton
Tr
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 5
T
C
= 25
T
C
= 125
S
Collector Current, I
C
[A]
10
20
30
40
50
60
70
80
20
100
1000
2000
Toff
Tf
Toff
Tf
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 5
T
C
= 25
T
C
= 125
S
Collector Current, I
C
[A]
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