參數(shù)資料
型號: SGH80N60
廠商: Fairchild Semiconductor Corporation
英文描述: Ultra-Fast IGBT
中文描述: 超快速IGBT
文件頁數(shù): 3/7頁
文件大?。?/td> 557K
代理商: SGH80N60
SGH80N60UF Rev. A1
S
2002 Fairchild Semiconductor Corporation
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
0
10
20
30
40
50
60
0.1
1
10
100
1000
Duty cycle : 50%
T
= 100
Power Dissipation = 60W
V
CC
= 300V
Load Current : peak of square wave
Frequency [Khz]
L
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
80A
40A
I
C
= 20A
C
C
Gate - Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
80A
40A
I
C
= 20A
C
C
Gate - Emitter Voltage, V
GE
[V]
0
30
60
90
120
150
0
1
2
3
4
Common Emitter
V
GE
= 15V
80A
40A
I
C
= 20A
C
C
Case Temperature, T
C
[
]
0.5
1
10
0
20
40
60
80
100
120
Common Emitter
V
GE
= 15V
T
C
= 25
T
C
= 125
C
C
Collector - Emitter Voltage, V
CE
[V]
0
2
4
6
8
0
50
100
150
200
250
20V
12V
15V
V
GE
= 10V
Common Emitter
T
C
= 25
C
C
Collector - Emitter Voltage, V
CE
[V]
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