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參數(shù)資料
| 型號(hào)： | SGH80N60 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Ultra-Fast IGBT |
| 中文描述： | 超快速I(mǎi)GBT |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 557K |
| 代理商： | SGH80N60 |
SGH80N60UF Rev. A1
S
2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
B
VCES
/
T
J
Voltage
I
CES
Collector Cut-Off Current
I
GES
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
600
--
--
V
Temperature Coefficient of Breakdown
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
°
C
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
--
--
--
--
250
± 100
uA
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 40mA, V
CE
= V
GE
I
C
= 40A
,
V
GE
= 15V
I
C
= 80A
,
V
GE
= 15V
3.5
--
--
4.5
2.1
2.6
6.5
2.6
--
V
V
V
V
CE(sat)
Dynamic Characteristics
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
2790
350
100
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn
-
On Switching Loss
E
off
Turn
-
Off Switching Loss
E
ts
Total Switching Loss
Q
g
Total Gate Charge
Q
ge
Gate-Emitter Charge
Q
gc
Gate-Collector Charge
L
e
Internal Emitter Inductance
V
CC
= 300 V, I
C
= 40A,
R
G
= 5
, V
GE
= 15V,
Inductive Load, T
C
= 25
°
C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
23
50
90
50
570
590
1160
30
55
150
160
630
940
1580
175
25
60
14
--
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
130
150
--
--
1500
--
--
200
250
--
--
2000
250
40
90
--
V
CC
= 300 V, I
C
= 40A,
R
G
= 5
, V
GE
= 15V
,
Inductive Load, T
C
= 125
°
C
V
CE
= 300 V, I
C
= 40A,
V
GE
= 15V
Measured 5mm from PKG
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SGH80N60UF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
| SGH80N60UF | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT |
| SGH80N60UFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Ultrafast IGBT |
| SGH80N60UFDTU | 功能描述:IGBT 晶體管 N-CH/100V/0.58/28A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGH80N60UFTU | 功能描述:IGBT 晶體管 Dis High Perf IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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