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參數(shù)資料
| 型號： | SGF80N60UFD |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | CO-PAK IGBT(CO-PAK絕緣柵雙極晶體管(IGBT)) |
| 中文描述： | 80 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 358K |
| 代理商： | SGF80N60UFD |
ELECTRICAL CHARACTERISTICS (IGBT PART)
(T
c
=25
°
C,Unless Otherwise Specified)
Characteristics
C - E Breakdown Voltage
Temperature Coeff. of
Breakdown Voltage
G - E threshold voltage
Collector cutoff Current
G - E leakage Current
Collector to Emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Turn on rise time
Turn off delay time
Turn off fall time
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
Symbol
BV
CES
V
CES/
T
J
V
GE(th)
I
CES
I
GES
V
CE
(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
Min
600
-
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
0.6
5.5
-
-
2.0
2.6
2790
347
96
17
33
97
70
0.12
0.68
0.8
178
40
49
14
Max
-
-
7.5
250
100
2.6
-
-
-
-
-
-
130
140
-
-
1.5
267
60
74
-
Units
V
V/
°
C
V
uA
nA
V
V
pF
pF
pF
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
nH
Test Conditions
V
GE
= 0V , I
C
= 250uA
V
GE
= 0V , I
C
= 1mA
I
C
= 40mA , V
CE
= V
GE
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
Ic=40A, V
GE
= 15V
Ic=80A, V
GE
= 15V
V
GE
= 0V , f = 1MHz
V
CE
= 30V
V
CC
= 300V , I
C
= 40A
V
GE
= 15V
R
G
=
5
Inductive Load
Vcc = 300V
V
GE
= 15V
Ic = 40A
Measured 5mm from PKG
SGF80N60UFD
CO-PAK IGBT
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