參數(shù)資料
型號(hào)： SFP9640
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： P-Channel Power MOSFET(漏源電壓為-200V的P溝道功率MOS場(chǎng)效應(yīng)管)
中文描述： 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 2/7頁(yè)
文件大小： 257K
代理商： SFP9640
P-C HANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
o
C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “ Miller “ ) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
o
C
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=-250
μ
A
I
D
=-250
μ
A
See Fig 7
V
DS
=-5V,I
D
=-250
μ
A
V
GS
=-30V
V
GS
=30V
V
DS
=-200V
V
DS
=-160V,T
C
=125
o
C
V
GS
=-10V,I
D
=-5.5A
V
DS
=-40V,I
D
=-5.5A
V
DD
=-100V,I
D
=-11A,
R
G
=9.1
See Fig 13
V
DS
=-160V,V
GS
=-10V,
I
D
=-11A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=-25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
o
C,I
S
=-11A,V
GS
=0V
T
J
=25
o
C,I
F
=-11A
di
F
/dt=100A/
μ
s
O
4
O
4
O
5
O
4
O
4
O
5
O
1
O
4
O
4
SFP9640
-200
--
-2.0
--
--
--
--
--
-0.16
--
--
--
--
--
207
81
16
23
54
19
46
9.2
22.9
--
--
-4.0
-100
100
-10
-100
0.5
--
1585
310
120
40
55
115
50
59
--
--
6.5
1220
--
--
--
180
1.24
-11
-44
-5.0
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=10mH, I
AS
=-11A, V
DD
=-50V, R
G
=27
*
, Starting T
J
=25
o
C
I
SD
-11A, di/dt
450A/
μ
s, V
DD
Pulse Test : Pulse Width = 250
μ
s, Duty Cycle
Essentially Independent of Operating Temperature
O
5
BV
DSS
, Starting T
J
=25
o
C
<
2%
<
<
<
O
1
O
O
3
O
2
4
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SFP9640H 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SFP9640L 功能描述:MOSFET PCh/200V/11a/0.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SFP9644 功能描述:MOSFET PCh/250V/8.6a/0.8Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SFP9N50 制造商:WINSEMI 制造商全稱:WINSEMI 功能描述:Silicon N-Channel MOSFET
SFP9Z14 功能描述:MOSFET P-CH/60V/6.7A/0.5OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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