
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : -10
μ
A (Max.) @ V
DS
= -200V
Low R
DS(ON)
: 0.344
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
θ
JC
R
θ
CS
R
θ
JA
o
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
o
C)
Continuous Drain Current (T
C
=100
o
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
o
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
Characteristic
Value
-200
-11
-7.0
-44
30
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
o
C
A
o
C
TO-220
1.Gate 2. Drain 3. Source
3
2
1
O
1
O
O
1
O
1
2
O
3
SFP9640
BV
DSS
= -200 V
R
DS(on)
= 0.5
I
D
= -11 A
807
-11
12.3
-5.0
123
0.98
- 55 to +150
300
1.02
--
62.5
--
0.5
--
1999 Fairchild Semiconductor Corporation
Rev. B