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| 型號(hào)： | SAX-XC878M-13FFI5V |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類(lèi)： | 微控制器/微處理器 |
| 英文描述： | 8-BIT, FLASH, 24 MHz, RISC MICROCONTROLLER, PQFP64 |
| 封裝： | PLASTIC, TQFP-64 |
| 文件頁(yè)數(shù)： | 103/141頁(yè) |
| 文件大小： | 2385K |
| 代理商： | SAX-XC878M-13FFI5V |
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XC878CLM
Functional Description
Data Sheet
57
V1.1, 2009-08
Table 20 shows the Flash data retention and endurance targets.
3.3.1
Flash Bank Pagination
The XC878 product family offers Flash devices with either 64 Kbytes or 52 Kbytes of
embedded Flash memory. Each Flash device consists of a Program Flash (P-Flash) and
a single Data Flash (D-Flash) bank. P-Flash has 120 pages of 8 wordlines per page with
64 bytes per wordline. D-Flash has 64 pages of 2 wordlines per page with 32 bytes per
wordline. Both types can be used for code and data storage.. The label “Data” neither
implies that the D-Flash is mapped to the data memory region, nor that it can only be
used for data storage. It is used to distinguish the different page width and wordline of
each Flash bank.
The internal structure of each Flash bank represents a page architecture for flexible
erase capability. The minimum erase width is always a complete page. The D-Flash
bank is divided into smaller size for extended erasing and reprogramming capability;
even numbers for each page size are provided to allow greater flexibility and the ability
to adapt to a wide range of application requirements.
Table 20
Flash Data Retention and Endurance (Operating Conditions apply)
Retention
Endurance1)2)
1) In Program Flash, one cycle refers to the programming of all pages in the flash bank and a mass erase.
2) In Data Flash, one cycle refers to the programming of all wordlines in a page and a page erase.
Size
Remarks
Program Flash
15 years
1000 cycles
up to 60 Kbytes
Data Flash
15 years
1000 cycles
4 Kbytes
10 years
10,000 cycles
4 Kbytes
5 years
30,000 cycles
4 Kbytes
1 year
100,000 cycles
4 Kbytes
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