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參數(shù)資料
| 型號： | SA25F020LEN |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | RES 82.5 OHM 1/10W .5% 0805 SMD |
| 中文描述： | 2MB的串行閃存與25MHz的SPI總線接口 |
| 文件頁數(shù)： | 28/37頁 |
| 文件大?。?/td> | 560K |
| 代理商： | SA25F020LEN |
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SA25F020 Advanced Information
SAIFUN
28
Sector Erase (SE)
The SE instruction sets all 512 Kb in the
selected sector to 1. Before it can be
executed, two separate instructions must
be carried out. The device must first be
write enabled via the WREN instruction,
and then a SE sequence, which consists of
four bytes, may be executed. The address
of the memory locations to be written must
be inside the sector to be erased and
outside the protected address field location
selected by the Block Write Protection
level. During an internal SE cycle, all
commands are ignored except the RDSR
instruction.
A SE instruction requires the following
sequence:
1. After the CSb line is pulled low to
select the device, the SE opcode is
transmitted via the SI line, followed
by the 3-byte address.
2. Erasing begins after the CSb pin is
brought high. The CSb pin's
low-to-high transition must occur
during
the
immediately after the clock in the
last address bit.
SCK
low
time,
As soon as CSb is driven high, the
self-timed SE cycle (whose duration is
defined as T
SE
) is initiated. While the SE
cycle is in progress, the status register
may be read to check the value of the
/RDY bit. The /RDY bit is 1 during the
self-timed SE cycle, and 0 when it is
completed. The WEN bit is reset at some
unspecified time before the cycle is
completed. The instruction sequence is
shown in Figure 18.
The SA25F020 is automatically returned to
the write disable state at the completion of
an SE cycle.
NOTES:
1. If the device is not write enabled,
the
device
ignores
instruction and returns to the
standby state when CSb is brought
high. A new CSb falling edge is
required to re-initiate the serial
communication.
2. A SE instruction applied to a sector
that is protected by the Block
Protect
(BP1,
described in Table 8, page 18, and
Table 9, page 21) is not executed.
the
SE
BP0)
bits
(as
1
3
2
10
9
8
7
6
5
4
0
31
30
29
28
Instruction
24 Bit Address
23
21
22
1
3
2
0
SCK
SI
MSB
CS
Figure 18. Sector Erase (SE) Instruction Sequence
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SA25F020LEMLFFX | 4 Mbit Uniform Sector, Serial Flash Memory |
| SA25F020LENFX | 4 Mbit Uniform Sector, Serial Flash Memory |
| SA32-11SRWA | 8mm (0.32INCH) SINGLE DIGIT NUMERIC DISPLAY |
| SA36-11YWA | Multiconductor Cable; Number of Conductors:4; Conductor Size AWG:22; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper; Outer Diameter:0.141" RoHS Compliant: Yes |
| SA36-11EWA | 9mm(0.36INCH) SINGLE DIGIT NUMERIC DISPLAYS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SA25F020LENF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2Mb Serial Flash with 25MHz SPI Bus Interface |
| SA25F020LENFX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2Mb Serial Flash with 25MHz SPI Bus Interface |
| SA25TFKHL-C1000-D | 制造商:Delkin Devices 功能描述:256MB SECURE DIGITAL, IND TEMP - Trays |
| SA26 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 SA26 Uni-Directional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SA26 _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
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