參數(shù)資料
型號： S29NS256P0SBJW000
廠商： SPANSION LLC
元件分類： DRAM
英文描述： MirrorBit Flash Family
中文描述： 16M X 16 FLASH 1.8V PROM, 80 ns, PBGA64
封裝： 6.20 X 7.70 MM , LEAD FREE, TFBGA-64
文件頁數(shù)： 77/86頁
文件大小： 2234K
代理商： S29NS256P0SBJW000
February 20, 2007 S29NS-P_00_A1
S29NS-P MirrorBit
TM
Flash Family
77
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
10.9
Erase and Programming Performance
Notes
1. Typical program and erase times assume the following conditions: 25
°
C, 1.8 V V
CC
, 10,000 cycles using checkerboard patterns.
2. Under worst case conditions of 90°C, V
CC
= 1.70 V, 100,000 cycles.
3. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
4. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 11.1,
Memory Array Commands on page 78
and
Table 11.2, Sector Protection Commands on page 80
for further information on command
definitions.
Table 10.11
Erase and Programming Performance
Parameter
Typ
(1)
Max
(2)
Unit
Comments
Sector Erase Time
64 Kword
V
CC
0.8
3.5
s
Excludes 00h
programming prior to
erasure
(3)
16 Kword
V
CC
0.15
2.0
64 Kword
V
PP
0.8
3.5
16 Kword
V
PP
0.15
2.0
Sector Erase Time
64 Kword
V
CC
0.90
5.00
Includes 00h
programming prior to
erasure
(3)
16 Kword
V
CC
0.45
1.85
64 Kword
V
PP
0.70
3.75
16 Kword
V
PP
0.35
1.40
Chip Erase Time
V
CC
77 (NS128P)
154 (NS256P)
306 (NS512P)
154 (NS128P)
308 (NS256P)
612 (NS512P)
s
Word Programming Time
V
CC
40
400
μs
Excludes system level
overhead
(4)
V
PP
24
240
Effective Word Programming Time
utilizing Program Write Buffer
V
CC
9.4
94
μs
V
PP
6
60
Total 32-Word Buffer Programming
Time
V
CC
300
3000
V
PP
192
1920
Chip Programming Time (using 32
word buffer)
V
CC
78.6 (NS128P)
157.3 (NS256P)
314.6 (NS512P)
157.3 (NS128P)
314.6 (NS256P)
629.2 (NS512P)
s
Excludes system level
overhead
(4)
V
PP
51 (NS128P)
101 (NS256P)
202 (NS512P)
102 (NS128P)
202 (NS256P)
404 (NS512P)
Erase Suspend/Erase Resume
Min
20
μs
Program Suspend/Program Resume
Min
20
μs
相關(guān)PDF資料
PDF描述
S29NS256P0SBJW003 MirrorBit Flash Family
S29NS256PABBJW000 MirrorBit Flash Family
S29NS256PABBJW003 MirrorBit Flash Family
S29NS512P MirrorBit Flash Family
S29NS512P0PBJW000 MirrorBit Flash Family
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29NS256P0SBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29NS256PABBJW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29NS256PABBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29NS512P 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29NS512P0PBJW000 功能描述:閃存 512M (32MX16) 66MHz Simultaneous R/W RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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