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    參數(shù)資料
    

    


    


    
型號(hào)：
S29NS256P0SBJW000

    

    
廠商：
SPANSION LLC

    

    
元件分類：
DRAM

    

    
英文描述：
MirrorBit Flash Family

    

    
中文描述：
16M X 16 FLASH 1.8V PROM, 80 ns, PBGA64

    

    
封裝：
6.20 X 7.70 MM , LEAD FREE, TFBGA-64

    

    
文件頁(yè)數(shù)：
27/86頁(yè)

    

    
文件大小：
2234K

    

    
代理商：
S29NS256P0SBJW000


    

    

    

	
    
    
    

    
    
	
    February 20, 2007 S29NS-P_00_A1
    S29NS-P MirrorBit
    TM
     Flash Family
    27
    D a t a
    S h e e t
    ( A d v a n c e
    I n f o r m a t i o n )
    6.
    Device Operations
    This section describes the read, program, erase, simultaneous read/write operations, handshaking, and reset 
    features of the Flash devices. 
    Operations are initiated by writing specific commands or a sequence with specific address and data patterns 
    into the command registers (see Tables 
    11.1
     and 
    11.2
    ). The command register itself does not occupy any 
    addressable memory location; rather, it is composed of latches that store the commands, along with the 
    address and data information needed to execute the command. The contents of the register serve as input to 
    the internal state machine and the state machine outputs dictate the function of the device. Writing incorrect 
    address and data values or writing them in an improper sequence may place the device in an unknown state, 
    in which case the system must write the reset command to return the device to the reading array data mode.
    6.1
    Device Operation Table
    The device must be setup appropriately for each operation. 
    Table 6.1
     describes the required state of each 
    control pin for any particular operation.
    Legend
    L = Logic 0, H = Logic 1, X = can be either V
    IL
     or V
    IH
    ., 
    = rising edge, 
    = high to low, 
    = toggle.
    Notes
    1. Address is latched on the rising edge of clock.
    2. CLK must stay low or high after CE# goes low when device in Asynchronous Read mode.
    6.2
    Asynchronous Read
    All memories require access time to output array data. In an asynchronous read operation, data is read from 
    one memory location at a time. Addresses are presented to the device in random order, and the propagation 
    delay through the device causes the data on its outputs to arrive asynchronously with the address on its 
    inputs. 
    To read data from the memory array, the system must first assert a valid address while driving AVD# and 
    CE# to V
    IL
    . WE# must remain at V
    IH
    . The rising edge of AVD# latches the address. The OE# signal must be 
    driven to V
    IL
    , once AVD# has been driven to V
    IH
    . 
    The data is output on A/DQ15 – A/DQ0 pins after the access time (t
    OE
    ) has elapsed from the falling edge of 
    OE#.
    Table 6.1  
    Device Operations
    Operation
    CE#
    OE#
    WE#
    CLK
    AVD#
    Amax–
    A16
    A/DQ15–
    A/DQ0
    RDY
    RESET#
    Asynchronous Read –
    Addresses Latched
    L
    L
    H
    X
    Addr In
    I/O
    H
    H
    Asynchronous Write
    L
    H
    X 
    Addr In
    I/O
    H
    H
    Standby (CE#)
    H
    X
    X
    X
    X
    X
    HIGH Z
    HIGH Z
    H
    Hardware Reset
    X
    X
    X
    X
    X
    X
    HIGH Z
    HIGH Z
    Burst Read Operations
    Latch Starting Burst Address by CLK
    L
    H
    H
    L
    Addr In
    Addr In
    X
    H
    Advance Burst read to next address
    L
    L
    H
    H
    X
    I/O
    H
    H
    Terminate current Burst read cycle
    H
    X
    H
    X
    X
    X
    HIGH Z
    HIGH Z
    H
    Terminate current Burst read cycle
    via RESET#
    X
    X
    H
    X
    X
    X
    HIGH Z
    HIGH Z
    L
    Terminate current Burst read cycle
    and start new Burst read cycle
    L
    X
    H
    Addr In
    Addr In
    X
    H
    
    
    
    
    
    


    


    

    相關(guān)PDF資料
    		

    PDF描述
    		

    
    

    
S29NS256P0SBJW003
MirrorBit Flash Family

    

    
S29NS256PABBJW000
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S29NS256PABBJW003
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S29NS512P
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S29NS512P0PBJW000
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    相關(guān)代理商/技術(shù)參數(shù)
    		

    參數(shù)描述
    		

    
    

    
S29NS256P0SBJW003
 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family

    

    
S29NS256PABBJW000
 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family

    

    
S29NS256PABBJW003
 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family

    

    
S29NS512P
 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family

    

    
S29NS512P0PBJW000
功能描述:閃存 512M (32MX16) 66MHz Simultaneous R/W RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel

    

    
    
    
    
	
    	
    
    
     
     
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