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參數(shù)資料
| 型號： | S29NS256P0SBJW000 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | MirrorBit Flash Family |
| 中文描述： | 16M X 16 FLASH 1.8V PROM, 80 ns, PBGA64 |
| 封裝： | 6.20 X 7.70 MM , LEAD FREE, TFBGA-64 |
| 文件頁數(shù)： | 47/86頁 |
| 文件大?。?/td> | 2234K |
| 代理商： | S29NS256P0SBJW000 |
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February 20, 2007 S29NS-P_00_A1
S29NS-P MirrorBit
TM
Flash Family
47
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Figure 6.5
Write Operation Status Flowchart
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address in the
same bank, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. When the operation is complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for
approximately t
ASP
[all sectors protected toggle time], then returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the
selected sectors that are protected.
START
Read 1
DQ7=valid
data
YES
NO
Read 1
DQ5=1
YES
NO
Write Buffer
Programming
YES
NO
Device BUSY,
Re-Poll
Read3
DQ1=1
YES
NO
Read 2
Read 3
Read 2
Read 3
Read 2
Read 3
Read3 DQ1=1
AND DQ7
Valid Data
YES
NO
(Note 4)
Write Buffer
Operation Failed
DQ6
toggling
YES
NO
TIMEOUT
(Note 1)
(Note 3)
Programming
Operation
DQ6
toggling
YES
NO
YES
NO
DQ2
toggling
YES
NO
Erase
Operation
Complete
Device in
Erase/Suspend
Mode
Program
Operation
Failed
DEVICE
ERROR
Erase
Operation
Complete
Read3= valid
data
YES
NO
Notes:
1) DQ6 is toggling if Read2 DQ6 does not equal Read3 DQ6.
2) DQ2 is toggling if Read2 DQ2 does not equal Read3 DQ2.
3) May be due to an attempt to program a 0 to 1. Use the RESET command to exit operation.
4) Write buffer error if DQ1 of last read =1.
5) Invalid state, use RESET command to exit operation.
6) Valid data is the data that is intended to be programmed or all 1's for an erase operation.
7) Data polling algorithm valid for all operations except advanced sector protection.
8) It can fail if one tries to program DQ7 from '0' to '1'
Device BUSY,
Re-Poll
Device BUSY,
Re-Poll
Device BUSY,
Re-Poll
(Note 1)
(Note 2)
(Note 6)
(Note 5)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29NS256P0SBJW003 | MirrorBit Flash Family |
| S29NS256PABBJW000 | MirrorBit Flash Family |
| S29NS256PABBJW003 | MirrorBit Flash Family |
| S29NS512P | MirrorBit Flash Family |
| S29NS512P0PBJW000 | MirrorBit Flash Family |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29NS256P0SBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29NS256PABBJW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29NS256PABBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29NS512P | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29NS512P0PBJW000 | 功能描述:閃存 512M (32MX16) 66MHz Simultaneous R/W RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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