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參數(shù)資料
| 型號： | RMPA39000 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | 37-40 GHz GaAs MMIC Power Amplifier |
| 中文描述： | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 4.28 X 2.90 MM, 0.05 MM HEIGHT, DIE |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 206K |
| 代理商： | RMPA39000 |
2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D
R
C1
0.1
μ
F
C2
0.47
μ
F
LM2941T
U1A
7400
R1
3.0k
R3
1.0k
D2
D1N6098
+6V
D3
D1N6098
+2.62V
R4
1.2k
*
R2
6.8k
U2
0
C5
0.1
μ
F
MMIC_–VG
0
C3
22
μ
F
R6
1k
R5
3k
0
0
C4
0.1
μ
F
R7
8.2k
*
Adj. For –Vg
–5V Off:
–5V Off:
+3.33V
+1.80V
*
0
0
0
R8
1.0k
0
1
2
3
0
4
3
2
1
5
–5V
MMIC_+VDD
CNT
IN
GND
OUT
ADJ
AD820/AD
+
–
V-
V+
Recommended Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE
DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to
properly test the amplifier.
Step 1:
Turn off RF input power.
Step 2:
the chip carrier. Slowly apply negative gate bias supply
voltage of -1.5V to Vg.
Connect the DC supply grounds to the ground of
Step 3:
+5V to Vd.
Slowly apply positive drain bias supply voltage of
Step 4:
current of Idq = 700mA.
Adjust gate bias voltage to set the quiescent
Step 5:
signal may now be applied at the appropriate frequency
band.
After the bias condition is established, the RF input
Step 6:
Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
Note:
negative gate voltage and positive drain voltage for the
above procedure is shown below.
An example auto bias sequencing circuit to apply
Figure 5. Application Information Auto-Bias Circuit
相關PDF資料 |
PDF描述 |
|---|---|
| RMPA39100 | DIODE SWITCHING DUAL-DUAL SERIES 240V 225mA-Io 350mW 50ns-trr SOT-26 3K/REEL |
| RMPA39200 | 37-40 GHz 1.6 Watt Power Amplifier MMIC |
| RMPA5251 | 4.90-5.85 GHz InGaP HBT Linear Power Amplifier |
| RMPA5252 | 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier |
| RMPA5255 | 4.9-5.9 GHz WLAN Linear Power Amplifier Module |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RMPA39100 | 制造商:Raytheon 功能描述:37-40 Ghz 1 watt factory waffle pack |
| RMPA39200 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:37-40 GHz 1.6 Watt Power Amplifier MMIC |
| RMPA5251 | 功能描述:射頻放大器 4.90-5.85 GHz HBT Linear Power Amp RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| RMPA5252 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier |
| RMPA5255 | 功能描述:射頻放大器 .9 - 5.9GHz WLAN Lin Pwr Amp Module RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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