參數(shù)資料
型號: RMPA5252
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 衰減器
英文描述: 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier
中文描述: 4900 MHz - 5900 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封裝: 3 X 3 MM, 0.90 MM HEIGHT, ROHS COMPLIANT, LEADLESS PACKAGE-16
文件頁數(shù): 1/7頁
文件大?。?/td> 250K
代理商: RMPA5252
2005 Fairchild Semiconductor Corporation
RMPA5252 Rev. C
1
www.fairchildsemi.com
March 2005
R
RMPA5252
4.9–5.9 GHz InGaP HBT WLAN Linear Power Amplifier
Features
Full 4.9 to 5.9GHz operation
34dB small signal gain
3% EVM at 18dBm modulated power out
3.3V single positive supply operation
Integrated power detector with 20dB dynamic range
Lead-free RoHS compliant 3 x 3 x 0.9 mm leadless package
Internally matched to 50 Ohms and DC blocked RF input/
output
Optimized for use in 802.11a applications
General Description
The RMPA5252 power amplifier is designed for high
performance WLAN applications in the 4.9–5.9 GHz frequency
band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal
matching on both input and output to 50 Ohms minimizes next
level PCB space and allows for simplified integration. An on-chip
detector provides power sensing capability. The PA’s low power
consumption and excellent linearity are achieved using our
InGaP Heterojunction Bipolar Transistor (HBT) technology.
Device
Electrical Characteristics
1
802.11a OFDM Modulation
(with 176 μs burst time, 100 μs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Notes:
1. VCC = 3.3V, VM12, VM34 = 2.4V, T
A
= 25°C, PA is constantly biased, 50 system.
2. Percentage includes system noise floor of EVM = 0.8%.
3. P
OUT
measured at P
IN
corresponding to power detection threshold.
Parameter
Min
Typ
Max
Units
Frequency
4.9
5.9
GHz
Collector Supply Voltage
3.0
3.3
3.6
V
Mirror Supply Voltage
2.4
V
Mirror Supply Current
28
mA
Gain
34
dB
Total Current @ 18dBm P
OUT
EVM @ 18dBm P
OUT2
Detector Output @ 18dBm P
OUT
Detector Threshold
3
275
mA
3.0
%
500
mV
5
dBm
Preliminary
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