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參數(shù)資料
| 型號(hào)： | RMPA39000 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | 37-40 GHz GaAs MMIC Power Amplifier |
| 中文描述： | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 4.28 X 2.90 MM, 0.05 MM HEIGHT, DIE |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 206K |
| 代理商： | RMPA39000 |
2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D
R
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with
gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of
bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of
wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges
through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for
appropriate stress relief. The RF input and output bonds should be typically 12 mils long corresponding to a typical 2 mil gap
between the chip and the substrate material.
Figure 1. Functional Block Diagram
Figure 2. Chip Layout and Bond Pad Locations
(Chip Size is 4.28mm x 2.90mm x 50μm. Back of chip is RF and DC Ground)
MMIC CHIP
DRAIN SUPPLY (Vd = +5V)
(VDA & VDB)
RF OUT
RF IN
GROUND
(Back of the Chip)
GATE SUPPLY
(VGA & VGB)
1.475
2.598
2.490
1.295
1.655
0.0
0.202
4.141
0.0
4.280
0.102
0.352
0.370
2.580
4.002
Dimensions in mm
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| RMPA39100 | DIODE SWITCHING DUAL-DUAL SERIES 240V 225mA-Io 350mW 50ns-trr SOT-26 3K/REEL |
| RMPA39200 | 37-40 GHz 1.6 Watt Power Amplifier MMIC |
| RMPA5251 | 4.90-5.85 GHz InGaP HBT Linear Power Amplifier |
| RMPA5252 | 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier |
| RMPA5255 | 4.9-5.9 GHz WLAN Linear Power Amplifier Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RMPA39100 | 制造商:Raytheon 功能描述:37-40 Ghz 1 watt factory waffle pack |
| RMPA39200 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:37-40 GHz 1.6 Watt Power Amplifier MMIC |
| RMPA5251 | 功能描述:射頻放大器 4.90-5.85 GHz HBT Linear Power Amp RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| RMPA5252 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier |
| RMPA5255 | 功能描述:射頻放大器 .9 - 5.9GHz WLAN Lin Pwr Amp Module RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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