參數(shù)資料
型號: RMPA5251
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 衰減器
英文描述: 4.90-5.85 GHz InGaP HBT Linear Power Amplifier
中文描述: 4900 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封裝: 3 X 3 MM, 0.90 MM HEIGHT, LEADLESS, QFN-16
文件頁數(shù): 1/10頁
文件大?。?/td> 499K
代理商: RMPA5251
2004 Fairchild Semiconductor Corporation
October 2004
RMPA5251 Rev. D
R
RMPA5251
4.90–5.85 GHz InGaP HBT Linear Power Amplifier
General Description
The RMPA5251 power amplifier is designed for high
performance WLAN applications in the 4.9 to 5.35 and 5.15
to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3
x 0.9 mm package with internal matching on both input and
output to 50
minimizes next level PCB space and allows
for simplified integration. The on-chip detector provides
power sensing capability while the logic control provides
power saving shutdown options. The PA’s low power
consumption and excellent linearity are achieved using our
InGaP Heterojunction Bipolar Transistor (HBT) technology.
Features
4.9 to 5.85 GHz Operation
27dB small signal gain
26dBm output power @ 1dB compression
2.5% EVM at 18.0dBm modulated power out
3.3V single positive supply operation
Adjustable bias current operation
Two power saving shutdown options (bias and logic
control)
Integrated power detector with >18dB dynamic range
Low profile 16 pin 3 x 3 x 0.9 mm standard QFN leadless
package
Internally matched to 50
Minimal external components
Optimized for use in IEEE 802.11a
WLAN applications
Device
Electrical Characteristics
Modulation (with 176ms burst time, 100ms idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Minimum
Typical
Frequency
4.90
Supply Voltage
3.0
3.3
Gain
27
Total Current @ 18dBm P
OUT
250
Total Current @ 19dBm P
OUT
260
EVM @ 18dBm P
2.5
EVM @ 19dBm P
3.5
Detector Output @ 19dBm P
OUT
450
Detector Threshold
5.0
P
OUT
Spectral Mask Compliance
21.0
1,3
802.11a OFDM
Electrical Characteristics
1
Single Tone
Maximum
5.35
3.6
Minimum
5.15
3.0
Typical
Maximum
5.85
3.6
Unit
GHz
V
dB
mA
mA
%
%
mV
dBm
dBm
10
3.3
28
240
250
2.5
3.5
500
5.0
20.0
OUT2
OUT2
4
5, 6
Parameter
Minimum
4.90
3.0
Typical
Maximum
5.35
3.6
Minimum
5.15
3.0
Typical
Maximum
5.85
3.6
Unit
GHz
V
dB
mA
Frequency
Supply Voltage
Gain
Total Quiescent Current
10
3.3
27
3.3
27.5
140–220
7
7, 11
140–220
Notes:
1. VC1, VC2, VC3, VM1, VM2, VM3 = 3.3 Volts, Tc=25°C, PA is constantly biased, 50
2. Percentage includes system noise floor of EVM=0.8%.
3. Not measured 100% in production.
4. P
measured at P
corresponding to power detection threshold.
5. Measured at P
at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
6. P
is adjusted to point where performance approaches spectral mask requirements.
7. 100% Production screened.
8. Bias Current is included in the total quiescent current.
9. VL is set to logic level for device off operation.
10. See Application information on Page 3.
11. See Data on Page 8.
system.
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參數(shù)描述
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