- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374589 > RFP6N50 (HARRIS SEMICONDUCTOR) 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號： | RFP6N50 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 6 A, 500 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 32K |
| 代理商： | RFP6N50 |
5-4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Applications Notes AN7254 and AN7260
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
1.5
2.5
0.5
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
N
3.5
O
V
GS
= 10V
I
D
= 6A
1.5
1.0
0.5
-50
0
50
100
150
T
C
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
I
D
= 250
μ
A
N
0
T
0
10
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
20
30
40
50
C
1400
200
0
1000
600
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
500
375
250
125
0
10
8
6
4
0
2
GATE
SOURCE
VOLTAGE
I
G(REF)
I
G(ACT)
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
DD
= BV
DSS
R
L
= 83
I
G(REF)
= 1.1mA
V
GS
= 10V
V
G
20
80
DRAIN SOURCE VOLTAGE
I
G(REF)
I
G(ACT)
V
D
V
DD
= BV
DSS
t, TIME (
μ
s)
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFM6N45, RFP6N45, RFP6N50
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP6N45 | 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs |
| RFM6N45 | 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs |
| RFP6P08 | -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs |
| RFP6P08 | P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS |
| RFP6P10 | P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP6P08 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP6P10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP70N03 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP70N03R4349 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP70N06 | 功能描述:MOSFET N-Ch Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。