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參數(shù)資料
| 型號： | RFP6N45 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 6 A, 450 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 32K |
| 代理商： | RFP6N45 |
5--1
Semiconductor
Features
6A, 450V and 500V
r
DS(ON)
= 1.250
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedence
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors specifically designed for appli-
cations such as switching regulators, switching converters,
motor drivers, relay drivers, and drivers for high power bipo-
lar switching transistors requiring high speed and low gate
drive power. These types can be operated directly from inte-
grated circuits.
Formerly developmental type TA17425.
Symbol
Packaging
JEDEC TO-204AA
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM6N45
TO-204AA
RFM6N45
RFP6N45
TO-204AA
RFP6N45
RFP6N50
TO-220AB
RFP6N50
NOTE: When ordering, include the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
September 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1998
File Number
1494.2
RFM6N45, RFP6N45,
RFP6N50
6A, 450V and 500V, 1.250 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFM6
N45,
RFP6N4
5,
RFP6N5
0)
/Subject
(6A,
450V
and
500V,
1.250
Ohm, N-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/Creator
()
/DOCIN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFM6N45 | 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs |
| RFP6P08 | -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs |
| RFP6P08 | P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS |
| RFP6P10 | P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS |
| RFP6P10 | -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP6N50 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP6P08 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP6P10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP70N03 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP70N03R4349 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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