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參數(shù)資料
| 型號： | RFP6N50 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 6 A, 500 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 32K |
| 代理商： | RFP6N50 |
5-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFM6N45
450
450
6
15
±
20
100
0.8
-55 to 150
RFP6N45
450
450
6
15
±
20
75
0.6
-55 to 150
RFP6N50
500
500
6
15
±
20
75
0.6
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (RGS = 20kW) (Note 1). . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
300
260
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFM6N45, RFP6N45
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
450
-
-
V
RFP6N50
500
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 8)
2
-
4
V
Zero-Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
1
μ
A
V
DS
= 0.8 x Rated BV
DSS
,
V
GS
= 0V, T
C
= 125
o
C
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0V
-
-
±
100
nA
Drain to Source On Resistance(Note 2 )
r
DS(ON)
I
D
= 6A, V
GS
= 10V, (Figures 6, 7)
-
-
1.250
Drain to Source On-Voltage (Note 2)
V
DS(ON)
I
D
= 6A, V
GS
= 10V
-
-
7.50
V
Turn-On Delay Time
t
d(ON)
I
D
= 3A, V
DD
= 250V, R
G
= 50
,
V
GS
= 10V, R
L
= 81
(Figures 10, 11, 12)
-
15
45
ns
Rise Time
t
r
-
40
80
ns
Turn-Off Delay Time
t
d(OFF)
-
190
300
ns
Fall Time
t
f
-
60
100
ns
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V
f = 1MHz, (Figure 9)
-
-
1500
pF
Output Capacitance
C
OSS
-
-
250
pF
Reverse Transfer Capacitance
C
RSS
-
-
200
pF
Thermal Resistance Junction to Case
R
θ
JC
RFM6N45
-
-
1.25
o
C/W
RFP6N45, RFP6N50
1.67
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 3A
-
-
1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= 4A, dI
SD
/dt = 100A/
μ
s
-
800
-
ns
NOTES:
2. Pulsed test: Pulse width
≤
300
μ
s duty cycle
≤
2%
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFM6N45, RFP6N45, RFP6N50
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