參數(shù)資料
型號(hào)： RFP6N50
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs
中文描述： 6 A, 500 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
文件頁(yè)數(shù)： 3/4頁(yè)
文件大?。?/td> 32K
代理商： RFP6N50
5-3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
7
6
5
4
3
2
1
0
100
1000
10
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
1
10
I
D
,
OPERATION IN THIS AREA
MAY BE LIMITED BY r
DS(ON)
DC OPERATION
100W
75W
T
C
= 25
o
C
V
DSS
(Max) 450V RFM6N45, RFP6N45
V
DSS
(MAX) 500V RFP6N50
0
6
8
10
12
14
I
D
D
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
12
4
2
10
8
6
4
2
0
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
V
GS
= 5V
V
GS
= 4V
V
GS
= 6V
V
GS
= 7 V to 10V
T
C
= 25
C
25
o
C
V
DS
= 20V
80
μ
s PULSE TEST
DUTY CYCLE
≤
2%
I
D
,
10
6
2
0
2
4
6
V
GS
, GATE TO SOURCE VOLTAGE (V)
14
0
125
o
C
-40
o
C
0
2
8
12
14
I
D,
DRAIN CURRENT (A)
2.4
2.0
1.6
1.2
0.8
0.4
0
r
D
,
O
)
-40
o
C
25
o
C
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
4
6
10
125
o
C
RFM6N45, RFP6N45, RFP6N50
相關(guān)PDF資料
PDF描述
RFP6N45 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs
RFM6N45 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs
RFP6P08 -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs
RFP6P08 P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS
RFP6P10 P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFP6P08 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
RFP6P10 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFP70N03 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFP70N03R4349 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFP70N06 功能描述:MOSFET N-Ch Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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