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參數(shù)資料
| 型號(hào)： | RFP14N06L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 83K |
| 代理商： | RFP14N06L |
6-4
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE TO SOURCE
RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0.1
1
10
10
0.01
50
1
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
If R = 0
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= +150
o
C
0
5
10
15
0
1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3.0
4.5
7.5
20
25
I
D
,
V
GS
= 4V
V
GS
= 10V
30
35
6.0
V
GS
= 3V
V
GS
= 2.5V
V
GS
= 4.5V
V
GS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
T
C
= 25
o
C
0
3.0
4.5
6.0
7.5
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
5
10
15
20
25
175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
,
-55
o
C
30
35
25
o
C
V
DD
= 15V
0
50
100
150
200
2.5
3.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
4.0
4.5
r
D
,
5.0
250
I
D
= 28A
I
D
= 7A
I
D
= 14A
I
D
= 3.5A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
)
0
20
0
10
R
GS
, GATE TO SOURCE RESISTANCE (
)
20
30
40
S
50
40
60
80
100
120
140
160
t
d(OFF)
t
r
t
f
t
d(ON)
V
DD
= 25V, I
D
= 14A, R
L
= 1.78
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
200
2.5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V, I
D
= 14A
O
RFD14N06L, RFD14N06LSM, RFP14N06L
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