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參數(shù)資料
| 型號： | RFP14N06L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 83K |
| 代理商： | RFP14N06L |
6-3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
8
4
0
25
50
75
100
125
150
12
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
16
175
t, RECTANGULAR PULSE DURATION (s)
10
-3
10
-2
10
-1
10
0
0.01
0.1
1
10
-5
10
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
+ T
A
P
DM
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
10
-4
T
Z
θ
J
N
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
1
100
10
1
I
D
,
DC
100
μ
s
100ms
1ms
10ms
200
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
C
= 25
o
C
T
J
= MAX RATED
t, PULSE WIDTH (s)
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
GS
= 10V
100
I
D
,
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
I
I25
175
---------------------
–
=
T
C
= 25
o
C
V
GS
= 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
RFD14N06L, RFD14N06LSM, RFP14N06L
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