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參數(shù)資料
| 型號： | RFP14N06L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 83K |
| 代理商： | RFP14N06L |
6-1
File Number
4088.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFD14N06L, RFD14N06LSM, RFP14N06L
14A, 60V 0.100 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. This performance is accomplished
through a special gate oxide design which provides full rated
conductance at gate bias in the 3V - 5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.
Formerly developmental type TA09870.
Features
14A, 60V
r
DS(ON)
= 0.100
Temperature Compensating PSPICE
Model
Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD14N06L
TO-251AA
14N06L
RFD14N06LSM
TO-252AA
14N06L
RFP14N06L
TO-220AB
FP14N06L
NOTE: Whenordering,usetheentirepartnumber. Addthesuffix9A,to
obtain the TO-252AA variant in tape and reel, i.e. RFD14N06LSM9A.
D
G
S
JEDEC TO-251AA
JEDEC TO-252AA
JEDEC TO-220AB
SOURCE
DRAIN
DRAIN (FLANGE)
GATE
GATE
SOURCE
DRAIN (FLANGE)
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet
July 1999
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