參數(shù)資料
型號(hào)： RFP14N06L
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs
中文描述： 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 83K
代理商： RFP14N06L
6-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD14N06L, RFD14N06LSM,
RFP14N06LS
60
60
±
10
14
Refer to Peak Current Curve
Refer to UIS Curve
48
0.32
-55 to 175
UNITS
V
V
V
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Drain Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
W
W/
o
C
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V, Figure 13
60
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A, Figure 12
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 48V,
V
GS
= 0V
T
C
= 25
o
C
T
C
= 150
o
C
-
-
1
μ
A
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
10V
-
-
100
nA
On Resistance
r
DS(ON)
I
D
= 14A, V
GS
= 5V
-
-
0.100
Turn-On Time
t
ON
V
DD
= 30V, I
D
= 7A,
R
L
= 4.28
, V
GS
= 5V,
R
GS
= 0.6
Figures 10, 18, 19
-
-
60
ns
Turn-On Delay Time
t
d(ON)
-
13
-
ns
Rise Time
t
r
-
24
-
ns
Turn-Off Delay Time
t
d(OFF)
-
42
-
ns
Fall Time
t
f
-
16
-
ns
Turn-Off Time
t
OFF
-
-
100
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 48V,
I
D
= 14A,
R
L
= 3.43
Figures 20, 21
-
-
40
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
-
25
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
-
1.5
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
Figure 14
-
670
-
pF
Output Capacitance
C
OSS
-
185
-
pF
Reverse Transfer Capacitance
C
RSS
-
50
-
pF
Thermal Resistance Junction-to-Case
R
θ
JC
-
-
3.125
o
C/W
Thermal Resistance Junction-to-Ambient
R
θ
JA
TO-251 and TO-252
-
-
100
o
C/W
TO-220
-
-
80
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 14A
-
-
1.5
V
Reverse Recovery Time
t
rr
I
SD
= 14A, dI
SD
/dt = 100A/
μ
s
-
-
125
ns
RFD14N06L, RFD14N06LSM, RFP14N06LS
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