參數(shù)資料
型號: RFP12N10L
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET
中文描述: 12 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 3/6頁
文件大小: 361K
代理商: RFP12N10L
2002 Fairchild Semiconductor Corporation
RFP12N10L Rev. B
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. FORWARD BIAS OPERATING AREA
FIGURE 3. SATURATION CHARACTERISTICS
FIGURE 4. TRANSFER CHARACTERISTICS
FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
FIGURE 6. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
100
10
1
1000
1
10
100
OPERATION IN THIS
REGION IS LIMITED
BY r
DS(ON)
0.1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
C
= 25
o
C
TJ = MAX RATED
DC OPERATION
60W
I
D
(MAX) CONTINUOUS
40
30
20
0
10
1
2
3
4
0
5
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
0.5%
T
C
= 25
C
5V
4V
3V
2V
I
D
,
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
20
15
10
0
5
1
V
GS
, GATE TO SOURCE VOLTAGE (V)
2
3
4
0
V
DS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
0.5%
5
25
o
C
125
o
C
-40
o
C
-40
o
C
I
D
,
125
o
C
r
D
,
I
D,
DRAIN CURRENT (A)
0.3
0.2
0.1
0
0
5
10
15
20
25
30
R
)
-40
o
C
25
o
C
V
GS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE
0.5%
125
o
C
2.0
1.5
1.0
0
-50
0.5
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
N
O
V
GS
= 5V, I
D
= 12A
PULSE DURATION = 80
μ
s
DUTY CYCLE
0.5%
RFP12N10L
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