參數(shù)資料
型號: RFP12N10L
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET
中文描述: 12 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 361K
代理商: RFP12N10L
2002 Fairchild Semiconductor Corporation
RFP12N10L Rev. B
RFP12N10L
12A, 100V, 0.200 Ohm, Logic Level,
N-Channel Power MOSFET
These are N-Channel enhancement mode silicon gate
power field effect transistors specifically designed for use
with logic level (5V) driving sources in applications such as
programmable controllers, automotive switching and
solenoid drivers. This performance is accomplished through
a special gate oxide design which provides full rated
conduction at gate biases in the 3V to 5V range, thereby
facilitating true on-off power control directly from logic circuit
supply voltages.
Formerly developmental type TA09526.
Features
12A, 100V
r
DS(ON)
= 0.200
Design Optimized for 5V Gate Drives
Can be Driven Directly from QMOS, NMOS,
TTL Circuits
Compatible with Automotive Drive Requirements
SOA is Power-Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP12N10L
TO-220AB
F12N10L
NOTE: When ordering, include the entire part number.
D
G
S
SOURCE
DRAIN
GATE
DRAIN
(TAB)
Data Sheet
January 2002
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFP12N10L 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC TO-220
RFP12N10L_Q 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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