參數(shù)資料
型號(hào)： RFP12N10L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET
中文描述： 12 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁數(shù)： 2/6頁
文件大?。?/td> 361K
代理商： RFP12N10L
2002 Fairchild Semiconductor Corporation
RFP12N10L Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP12N10L
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
100
V
Drain to Gate Voltage (R
GS
= 1M
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
100
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
12
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
30
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±10
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
o
C, Derate Linearly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
60
W
Above T
C
= 25
0.48
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
pkg
300
260
o
o
C
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250mA, V
GS
= 0V
100
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250mA (Figure 7)
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 65V, V
DS
= 80V
-
-
1
μ
A
V
DS
= 65V, V
DS
= 80V
T
C
= 125
o
C
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= 10V, V
DS
= 0V
-
-
100
μ
A
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 12A, V
GS
= 5V (Figures 5, 6)
-
-
0.2
Input Capacitance
C
ISS
V
(Figure 8)
GS
= 0V, V
DS
= 25V, f = 1MHz
-
-
900
pF
Output Capacitance
C
OSS
-
-
325
pF
Reverse-Transfer Capacitance
C
RSS
-
-
170
pF
Turn-On Delay Time
t
d(ON)
I
V
(Figures 9, 10, 11)
D
GS
= 6A, V
= 5V
DD
= 50V, R
G
= 6.25
,
-
15
50
ns
Rise Time
t
r
-
70
150
ns
Turn-Off Delay Time
t
d(OFF)
-
100
130
ns
Fall Time
t
f
-
80
150
ns
Thermal Resistance Junction to Case
R
θ
JC
RFP12N10L
2.083
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 6A
-
-
1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= 4A, dI
SD
/dt = 50A/
μ
s
-
150
-
ns
NOTES:
2. Pulsed: pulse duration = 80
3. Repetitive rating: pulse width limited by maximum junction temperature.
μ
s max, duty cycle = 2%.
RFP12N10L
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