參數(shù)資料
型號(hào): RFP12N10L
廠(chǎng)商: INTERSIL CORP
元件分類(lèi): JFETs
英文描述: 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET(12A, 100V, 0.200 Ω,邏輯電平N溝道功率MOS場(chǎng)效應(yīng)管)
中文描述: 12 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 4/5頁(yè)
文件大?。?/td> 38K
代理商: RFP12N10L
6-227
FIGURE 7. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 8. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Applications Notes AN7254 and AN7260
FIGURE 9. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 10. SWITCHING TIME TEST CIRCUIT
FIGURE 11. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1.3
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
50
100
150
-50
V
DS
= V
GS
I
D
= 250
μ
A
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
1.2
800
600
400
200
0
0
10
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
20
30
40
50
C
ISS
C
OSS
C
RSS
C
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
DRAIN SOURCE
VOLTAGE
GATE
SOURCE
VOLTAGE
R
L
= 8.33
I
G (REF)
= 0.56mA
V
GS
= 5V
V
DD
= BV
DSS
V
DD
= BV
DSS
BV
DSS
I
G
(REF)
I
G
(ACT)
20
80I
G
(REF)
I
G
(ACT)
t, TIME (
μ
s)
G
D
100
75
50
25
0
10
8
6
4
0
2
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFP12N10L
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFP12N10L 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC TO-220
RFP12N10L_Q 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFP12N10LR4154 (6 AMPS) 制造商:Intersil Corporation 功能描述:
RFP12N18 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFP12N20 制造商:Harris Corporation 功能描述: