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參數(shù)資料
| 型號： | RFP12N10L |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET(12A, 100V, 0.200 Ω,邏輯電平N溝道功率MOS場效應(yīng)管) |
| 中文描述： | 12 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 38K |
| 代理商： | RFP12N10L |
6-225
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP12N10L
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 1M
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Above T
C
= 25
o
C, Derate Linearly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
100
V
100
V
12
A
30
A
10
V
60
W
0.48
W/
o
C
o
C
-55 to 150
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250mA, V
GS
= 0V
100
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250mA (Figure 7)
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 65V, V
DS
= 80V
-
-
1
μ
A
V
DS
= 65V, V
DS
= 80V
T
C
= 125
o
C
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= 10V, V
DS
= 0V
-
-
100
μ
A
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 12A, V
GS
= 5V (Figures 5, 6)
-
-
0.2
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1MHz
(Figure 8)
-
-
900
pF
Output Capacitance
C
OSS
-
-
325
pF
Reverse-Transfer Capacitance
C
RSS
-
-
170
pF
Turn-On Delay Time
t
d(ON)
I
D
= 6A, V
DD
= 50V, R
G
= 6.25
,
V
GS
= 5V
(Figures 9, 10, 11)
-
15
50
ns
Rise Time
t
r
-
70
150
ns
Turn-Off Delay Time
t
d(OFF)
-
100
130
ns
Fall Time
t
f
-
80
150
ns
Thermal Resistance Junction to Case
R
θ
JC
RFP12N10L
2.083
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 6A
-
-
1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= 4A, dI
SD
/dt = 50A/
μ
s
-
150
-
ns
NOTES:
2. Pulsed: pulse duration = 80
μ
s max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFP12N10L
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|---|---|
| RFP12N10L | 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC TO-220 |
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| RFP12N10LR4154 (6 AMPS) | 制造商:Intersil Corporation 功能描述: |
| RFP12N18 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP12N20 | 制造商:Harris Corporation 功能描述: |
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