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參數(shù)資料
| 型號： | RFM10N45 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 10 A, 450 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 31K |
| 代理商： | RFM10N45 |
5-4
RFM10N45, RFM10N50
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
3
2
1
-50
T
J
, JUNCTION TEMPERATURE (
o
C)
2.5
1.5
0
100
N
0
50
150
200
I
D
= 10A
V
GS
= 10V
0.5
O
1.1
0.9
0.7
-50
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.0
0.8
0.6
0
200
T
50
100
150
1.2
1.3
1.4
I
D
= 250mA
V
GS
= V
DS
0
20
30
40
50
C
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
4000
3000
2000
0
10
C
ISS
C
OSS
1000
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
GS
+ C
DS
500
375
125
0
20
)
)
IG ACT
t, TIME (
μ
s)
80
)
)
IG ACT
10
8
6
2
0
V
D
,
V
G
,
V
DD
= BV
V
DD
= 0.75 BV
DSS
V
DD
= 0.50BV
DSS
V
DD
= 0.25B V
DSS
DRAIN SOURCE VOLTAGE
IN DESCENDING ORDER:
R
L
= 50
I
G(REF)
= 2.1mA
GS
= 10V
PLATEAU VOLTAGES
250
4
V
DD
= BV
DSS
SGATE
VOLTAGE
V
DD
= BV
DSS
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
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|---|---|
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