參數(shù)資料
型號： RFM10N45
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs
中文描述： 10 A, 450 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
文件頁數(shù)： 2/4頁
文件大?。?/td> 31K
代理商： RFM10N45
5-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFM10N45
450
450
10
20
±
20
150
1.2
-55 to 150
RFM10N50
500
500
10
20
±
20
150
1.2
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 1M
)
(Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
260
260
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFM10N45
BV
DSS
V
GS
= 0V, I
D
= 250
μ
A
450
-
-
V
RFM10M50
500
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A, (Figure 8)
2.0
-
4.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
-
-
1
μ
A
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
V
GS
= 10V, I
D
= 10A, (Figures 6, 7)
-
-
0.600
Drain to Source On Voltage (Note 2)
V
DS(ON)
V
GS
= 10V, I
D
= 10A
V
DS
= 250, I
D
≈
5A, V
GS
= 10V, R
G
= 50
,
R
L
= 50
,
(Figures 10, 11, 12)
6.0
V
Turn-On Delay Time
t
d(ON)
-
26
60
ns
Rise Time
t
r
-
50
100
ns
Turn-Off Delay Time
t
d(OFF)
-
525
900
ns
Fall Time
t
f
-
105
180
ns
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz, (Figure 9)
-
-
3000
pF
Output Capacitance
C
OSS
-
-
600
pF
Reverse Transfer Capacitance
C
RSS
-
-
200
pF
Thermal Impedance Junction to Case
R
θ
JC
-
-
0.83
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 5A
-
-
1.4
V
Reverse Recovery Time
t
rr
I
SD
= 4A, dI
SD
/dt = 100A/
μ
s
-
950
-
ns
NOTE:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFM10N45, RFM10N50
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