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參數(shù)資料
| 型號(hào)： | RFM10N45 |
| 廠(chǎng)商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 10 A, 450 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 31K |
| 代理商： | RFM10N45 |
5-3
RFM10N45, RFM10N50
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
T
C
, CASE TEMPERATURE (
o
C)
P
0.0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
12
10
8
6
4
2
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
100
1
I
D
,
10
3
10
I
D
MAX CONTINUOUS
OPERATION IN THIS AREA
MAY BE LIMITED BY r
DS(ON)
V
DSS
(MAX) = 450V (RFM10N45)
V
DSS
(MAX) = 500V (RFM10N50)
DC
1
T
J
= MAX RATED, T
C
= 25
o
C
10
2
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
4
6
8
10
0
14
24
20
16
0
12
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
8
10V, 8V
V
GS
= 4.0V
6.0V
3.0V
4.5V
4
2
12
5.0V
3.5V
0
2
3
7
1
0
8
12
20
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
16
4
4
24
5
6
T
C
= -40
o
C
T
C
= 25
o
C
T
C
= 125
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
V
DS
= 25V
20
I
D,
DRAIN CURRENT (A)
4
8
12
0
28
1.2
1.0
0.8
0.2
0.6
r
D
,
T
C
= 125
o
C
0.4
0
16
24
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 25
o
C
T
C
= -40
o
C
O
)
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|---|---|
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