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參數(shù)資料
| 型號(hào)： | RFM10N50 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | CAP 2200PF 200V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 |
| 中文描述： | 10 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 31K |
| 代理商： | RFM10N50 |
5-1
Semiconductor
Features
10A, 450V and 500V
r
DS(ON)
= 0.600
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA17435.
Symbol
Packaging
JEDEC TO-204AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM10N45
TO-204AA
RFM10N45
RFM10N50
TO-204AA
RFM10N50
NOTE: When ordering, include the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
September 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1998
File Number
1788.1
RFM10N45,
RFM10N50
10A, 450V and 500V, 0.600 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFM10
N45,
RFM10
N50)
/Subject
(10A,
450V
and
500V,
0.600
Ohm, N-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
204AA)
/Creator
()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
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