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參數(shù)資料
| 型號： | RFF70N06 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET |
| 中文描述： | 25 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 78K |
| 代理商： | RFF70N06 |
4-449
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table)
.
Delta Tests and Limits (JANTX/JANTXV Equivalent)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, T
C
= 25
o
C
V
DS
= 80% Rated Value, T
C
= 25
o
C
T
C
= 125
o
C at Rated I
D
I
D
= 1.0mA, T
C
= 25
o
C
±
20(Note 5)
nA
Zero Gate Voltage Drain Current
I
DSS
±
25(Note 5)
μ
A
On Resistance
r
DS(ON)
±
20% (Note 6)
Gate Threshold Voltage
V
GS(TH)
±
20% (Note 6)
V
NOTES:
5. Or 100% of Initial Reading (whichever is greater).
6. Of Initial Reading.
Screening Information
TEST
JANTX/JANTXV EQUIVALENT
Gate Stress
V
GS
= 30V, t = 250
μ
s
Pind
Optional
PDA
10%
Pre Burn-In Test (Note 7)
MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25
o
C)
Steady State Gate Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
V
GS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 48 hours
Interim Electrical Tests (Note 7)
All Delta Parameters Listed in the Delta Tests and Limits Table
Steady State Reverse Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
V
DS
= 80% of Rated Value,
T
A
= 150
o
C, Time = 168 hours
Final Electrical Tests (Note 7)
MIL-S-19500, Group A, Subgroup 2
NOTE:
7. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Safe Operating Area
SOA
V
DS
= 48V, t = 10ms
4.8
A
Unclamped Inductive Switching
I
AS
V
GS(PEAK)
= 15V, L = 0.1mH
75
A
Thermal Response
V
SD
t
H
= 100ms; V
H
= 25V, I
H
= 4A
220
mV
Thermal Impedance
V
SD
t
H
= 500ms; V
H
= 25V, I
H
= 4A
330
mV
RFF70N06
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