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參數(shù)資料
| 型號： | RFF70N06 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET |
| 中文描述： | 25 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 78K |
| 代理商： | RFF70N06 |
4-445
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
1
0.01
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
300
1000
75
100
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
If R = 0
0
0
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
6
8
10
V
GS
= 5V
V
GS
= 6V
V
GS
= 7V
V
GS
= 10V
V
GS
= 20V
25
50
75
150
V
GS
= 4.5V
100
125
I
D
,
250
μ
s PULSE TEST
T
C
= 25
o
C
-55
o
C
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
0
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
150
o
C
25
o
C
25
50
100
75
125
150
V
DD
= 15V
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
T
J
, JUNCTION TEMPERATURE (
o
C)
120
160
2.5
N
PULSE DURATION = 250
μ
s
V
GS
= 10V,
I
D
O
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
160
120
T
J
, JUNCTION TEMPERATURE (
o
C)
N
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
RFF70N06
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